| PART |
Description |
Maker |
| 1SS193 E000243 |
From old datasheet system
ULTRA HIGH SWITCHING APPLICATION
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| HN2D02FUTW1T1 HN2D02FUTW1T1/D HN2D02FUTW1T1G |
Ultra High Speed Switching Diodes
Ultra High Speed Switching Diodes
|
ON Semiconductor
|
| 1SS19607 1SS196 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| L1SS184LT1G |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| L1SS226LT1G L1SS226LT1 |
Ultra High Speed Switching Application
|
LRC[Leshan Radio Company]
|
| L1SS184LT1G L1SS184LT1 |
Ultra High Speed Switching Application
|
LRC[Leshan Radio Company]
|
| HN1D03F |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS33607 1SS336 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN4D01JU |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| HN1D02F07 HN1D02F |
Ultra-High-Speed Switching Applications
|
Toshiba Semiconductor
|
